Light emitting device package and ultraviolet lamp having the same

ABSTRACT

Provided is a light emitting device package. The light emitting device package comprises a body, a heat diffusing member, a light emitting diode (LED), and a buffer layer. A cavity with an opened topside is formed in the body. The heat dissipation member is disposed between a bottom surface of the cavity and a lower surface of the body. The LED is disposed on one of an electrode disposed on the bottom surface of the cavity. The buffer layer is disposed between the heat dissipation member and a pad and has a thickness thinner than a thickness of the heat dissipation member.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.13/469,361 filed on May 11, 2012, which claims priority under 35 U.S.C.§ 119(a) of Korean Patent Application No. 10-2011-0045378 and No.10-2011-0045379 filed on May 13, 2011, which is hereby incorporated byreference in its entirety.

BACKGROUND

The present disclosure relates to a light emitting device package and anultraviolet lamp having the light emitting device package.

Light emitting diodes (LEDs) may be used as light sources and formed ofa compound semiconductor material such as a GaAs-containing material, anAlGaAs-containing material, a GaN-containing material, anInGaN-containing material, and an InGaAlP-containing material.

Light emitting device packages capable of emitting light of variouscolors can be fabricated by packaging such LEDs. Light emitting devicepackages are used as light sources for a variety of devices such aslighting display devices, character display devices, and image displaydevices.

Particularly, ultraviolet (UV) LEDs can emit light having a wavelengthof 245 nm to 405 nm. For example, short-wavelength light emitted from UVLEDs may be used for sterilization or purification, and long-wavelengthlight emitted from UV LEDs may be used for light exposing or UV curing.

However, while emitting light, UV LEDs generate heat that causes errorsand lowers reliability. Such heat can be dissipated by increasing thesize of packages of UV LEDs. However, in this case, it is difficult toprovide highly integrated, economical LED packages.

SUMMARY

Embodiments provide a light emitting device package having an improvedstructure.

Embodiments provide a light emitting device package in which a heatdissipation member is disposed between a body and a light emittingdiode.

Embodiments provide a light emitting device package in which a bufferlayer is disposed between a body and a heat dissipation member.

Embodiments provide an ultraviolet light emitting device packageincluding an ultraviolet light emitting diode and a protection devicefor the ultraviolet light emitting diode.

Embodiments provide a light emitting device package including a cavityin which a plurality of sub cavities are formed therein.

Embodiments provide a light emitting device package in which aprotection device is disposed in at least one of sub cavities to protectan ultraviolet light emitting diode.

Embodiments provide a reliable ultraviolet lamp including a lightemitting device package.

In one embodiment, a light emitting device package comprises: a bodycomprising a cavity with an opened topside, the body comprising aceramic material; a heat dissipation member between a bottom surface ofthe cavity and a lower surface of the body; a plurality of electrodes onthe bottom surface of the cavity; a plurality of pads disposed on thelower surface of the body and electrically connected to at least one ofthe electrodes; a light emitting diode (LED) disposed on one of theelectrodes disposed on the bottom surface of the cavity, the lightemitting diode being electrically connected to at least one of theelectrodes; and a buffer layer disposed between the heat dissipationmember and at least one of the pads and having a thickness thinner thana thickness of the heat dissipation member.

In another embodiment, a light emitting device package comprises: a bodycomprising a cavity with an opened topside, the body comprising aceramic material; a plurality of electrodes comprising a first electrodedisposed in a first region of a bottom surface of the cavity, and atleast one second electrode disposed on the bottom surface of the cavityand spaced apart from the first electrode; a plurality of padscomprising a first pad disposed on a lower surface of the body andcorresponding to the first electrode, and a second pad electricallyconnected to the first pad; a light emitting diode disposed on the firstelectrode disposed on the bottom surface of the cavity, the lightemitting diode being electrically connected to at least one of theelectrodes; a heat dissipation member disposed in the body between thefirst electrode and the first pad; and a buffer layer disposed betweenthe heat dissipation member and at least one of the pads, wherein asurface of the heat dissipation member has a roughness.

In further another embodiment, an ultraviolet lamp comprises: a lightemitting device package: and a module board on which the light emittingdevice package is disposed, wherein the light emitting device packagecomprises: a body comprising a cavity with an opened topside, the bodycontaining a ceramic material; a heat dissipation member disposedbetween a bottom surface of the cavity and a lower surface of the body;a plurality of electrodes on the bottom surface of the cavity; aplurality of pads disposed on the lower surface of the body andelectrically connected to at least one of the electrodes; a lightemitting diode (LED) disposed on one of the electrodes disposed on thebottom surface of the cavity, the light emitting diode beingelectrically connected to the electrodes; and a buffer layer disposedbetween the heat dissipation member and at least one of the pads andhaving a thickness thinner than a thickness of the heat dissipationmember.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view illustrating a light emitting devicepackage according to a first embodiment.

FIG. 2 is a plan view illustrating the light emitting device package ofFIG. 1.

FIG. 3 is a bottom view illustrating the light emitting device packageof FIG. 1.

FIG. 4 is a sectional view taken line A-A of FIG. 2.

FIG. 5 is a partially enlarged view for illustrating the roughness of aheat dissipation member illustrated in FIG. 4.

FIG. 6 is a sectional view taken along line B-B of FIG. 2.

FIGS. 7 to 9 are views illustrating modified versions of the lightemitting device package illustrated in FIG. 4.

FIG. 10 is a sectional view taken along line A-A of FIG. 2 forillustrating a light emitting device package according to a secondembodiment.

FIG. 11 is a sectional view taken along line B-B of FIG. 2 forillustrating a light emitting device package according to the secondembodiment.

FIGS. 12 to 13 are views illustrating a modified version of the lightemitting device package illustrated in FIG. 10.

FIG. 14 is a view illustrating a light emitting device package accordingto a third embodiment.

FIG. 15 is a view illustrating a light emitting device package accordingto a fourth embodiment.

FIG. 16 is a view illustrating a light emitting device package accordingto a fifth embodiment.

FIG. 17 is a plan view illustrating a light emitting device packageaccording to a sixth embodiment.

FIG. 18 is a sectional view illustrating a light emitting device packageaccording to a seven embodiment.

FIG. 19 is a view illustrating a light emitting diode (LED) according toan embodiment.

FIG. 20 is a perspective view illustrating an ultraviolet (UV) lampincluding a light emitting device package according to an embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Embodiments will now be described in detail with reference to theaccompanying drawings in such a manner that the technical idea of thepresent disclosure may easily be carried out by a person of ordinaryskill in the art. However, the scope and spirit of the presentdisclosure are not limited to the embodiments but can be realized indifferent forms.

In the specification, when it is described that one comprises (orincludes or has) some elements, it should be understood that it maycomprise (or include or have) only those elements, or it may comprise(or include or have) other elements as well as those elements if thereis no specific limitation.

In the drawings, regions not relating to descriptions are omitted forclarity in description, and layers and regions are exaggerated forclarity. Throughout the specification, like reference numerals denotelike elements.

It will be understood that when a layer, a film, a region, or a plate isreferred to as being cony another layer, film, region, or plate, it canbe directly on the other layer, film, region, or plate, or interveninglayers, films, regions, or plates may also be present. However, if alayer, a film, a region, or a plate is referred to as being ‘directlyon’ another layer, film, region, or plate, there is not interveninglayer, film, region, or plate.

Hereinafter, a light emitting device package will be described withreference to FIGS. 1 to 6 according to a first embodiment.

FIG. 1 is a perspective view illustrating a light emitting devicepackage 100 according to a first embodiment; FIG. 2 is a plan viewillustrating the light emitting device package 100 of FIG. 1; FIG. 3 isa bottom view illustrating the light emitting device package 100 of FIG.1; FIG. 4 is a sectional view taken line A-A of FIG. 2; FIG. 5 is apartially enlarged view for illustrating the roughness of a heatdissipation member illustrated in FIG. 4; and FIG. 6 is a sectional viewtaken along line B-B of FIG. 2.

Referring to FIGS. 1 to 6, the light emitting device package 100includes: a body 110 having a cavity 111 with an opened topside; aplurality of sub cavities 112 and 113 (first and second sub cavities 112and 113) disposed in the cavity 111; first to third electrodes 121, 123,and 125 disposed in the cavity 111 of the body 110; a light emittingdiode (LED) 131 disposed on the first electrode 121; and a protectiondevice 133 disposed in one of the sub cavities 112 and 113.

As shown in FIGS. 4 and 6, the body 110 may be formed by stacking aplurality of insulation layers L1 to L7 (first to seventh insulationlayers L1 to L7). The insulation layers L1 to L7 are stacked in thethickness direction of the LED 131. The insulation layers L1 to L7include a ceramic material. The ceramic material includes a lowtemperature co-fired ceramic material or a high temperature co-firedceramic material. The body 110 may include a metal pattern andconnection members 117. The metal pattern may be formed on at least oneof the top and lower surfaces of one of the insulation layers L1 to L7,and the insulation layers L1 to L7 may vertically penetrate the body 110for selective connection with the metal pattern. The connection members117 include vias or via holes. However, the connection members 117 arenot limited to the vias or via holes. In another example, the insulationlayers L1 to L7 may include insulation members formed of a nitride oroxide. Specifically, the insulation layers L1 to L7 may includeinsulation members formed of a metal nitride having a thermalconductivity greater than those of oxides or nitrides. For example, thebody 110 may be formed of Si_(x)O_(y), Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y),Al₂O₃, or AlN. In another example, the body 110 may be formed of a metalnitride having a thermal conductivity of 140 W/mK or greater.

The insulation layers L1 to L7 of the body 110 may have the samethickness, or at least one of the insulation layers L1 to L7 may have adifferent thickness. However, the current embodiment is not limitedthereto. The insulation layers L1 to L7 of the body 110 are individuallayers stacked through a manufacturing process. The insulation layers L1to L7 may be formed in one piece by a firing process. In FIGS. 4 and 6,the body 110 includes seven insulation layers L1 to L7. However, thebody 110 may include three or more insulation layers. The currentembodiment is not limited thereto.

The body 110 includes a stepped structure 115. The stepped structure 115is formed along the periphery of the top surface of the body 110. Thestepped structure 115 is located between the top surface of the body 110and the cavity 111, and the top surface of the stepped structure 115 islower than the top surface of the body 110. The stepped structure 115 islocated along the periphery of an upper portion of the cavity 111.

The cavity 111 is formed in an upper portion of the body 110 bydownwardly recessing the top surface of the body 110. The topside of thecavity 111 is opened. Light emitted from the LED 131 may propagatethrough the topside of the cavity 111.

The cavity 111 may have a polygonal shape, and edges of the cavity 111may be chamfered or rounded. In another example, the cavity 111 may havea circle shape. However, the cavity 111 is not limited thereto. Thecavity 111 includes a region of the body 110 not including the steppedstructure 115.

The width of a top portion of the cavity 111 may be equal to the widthof a bottom portion of the cavity 111. A sidewall 116 of the cavity 111may be perpendicular to the bottom of the cavity 111. In this case,since insulation layers (L1 to L7) having the same cavity width can bestacked, a process for manufacturing the light emitting device package100 may be easily carried out. In another example, the width of thelower portion of the cavity 111 may be different from the width of anupper portion of the cavity 111. In this case, a molding member may befirmly molded in the cavity 111 to suppress permeation of moisture.

A metal layer may be selectively disposed on the sidewall 116 of thecavity 111. The metal layer may be formed by coating the sidewall 116with a metal having a reflectance of 50% or greater or a metal having ahigh thermal conductivity. The metal layer may increase light extractionefficiency and heat dissipation efficiency of the cavity 111. The metallayer may be formed on the sidewall 116 partially or entirely. However,metal layer is not limited thereto. If the body 110 is formed of amaterial such as AlN having a high thermal conductivity, the metal layermay not be formed. The metal layer may also be formed on the bottomsurface of the cavity 111 to improve light reflection efficiency of thebottom surface of the cavity 111. In this case, the metal layer may belocated on the bottom surface of the cavity 111 in a manner such thatthe metal layer is not electrically connected to an electrode disposedin the cavity 111. The metal layer may be a reflection layer having areflectance of 80% or greater.

The sub cavities 112 and 113 are disposed in the cavity 111 as shown inFIGS. 1 and 2. The distance between the sub cavities 112 and 113 may begreater than the width of the LED 131. The sub cavities 112 and 113 maybe deeper than the cavity 111, and the depths of the sub cavities 112and 113 may be equal to or greater than at least the thickness of theprotection device 133. The sub cavities 112 and 113 may havepredetermined depths so that the protection device 133 cannot protrudefrom the bottom surface of the cavity 111. The depths of the subcavities 112 and 113 may be about 150 μm±10 μm. However, the depths ofthe sub cavities 112 and 113 are not limited thereto. The depths of thesub cavities 112 and 113 may be a range of ½ to ¼ of the depth of thecavity 111. In this case, light emitted from the LED 131 may be lessabsorbed. Thus, light extraction efficiency may not be decreased, andthe directional angle of light may not be distorted. The protectiondevice 133 includes a Zener diode.

The first sub cavity 112 is disposed between a first side of the LED 131and a side of the cavity 111, and the second sub cavity 113 is disposedbetween a second side of the LED 131 and the other side of the cavity111. The first and second sides of the LED 131 may be opposite sides.The first and second sub cavities 112 and 113 may be disposed on anoblique line passing through the center of the LED 131 or at symmetricpositions with respect to the center of the LED 131. However, theposition of the first and second sub cavities 112 and 113 are notlimited thereto.

The second sub cavity 113 may be a dummy cavity in which no protectiondevice is disposed. The first and second sub cavities 112 and 113 aresymmetric with respect to the LED 131, and owing to this, heat generatedfrom the LED 131 can be uniformly distributed in the cavity 111. Thus,the light emitting device package 100 can be thermally stable. Inanother example, both the first and second sub cavities 112 and 113 maybe dummy cavities.

First to fifth electrodes 121, 123, 125, 127, and 129 are disposed inthe cavity 111 and the sub cavities 112 and 113 so as to selectivelysupply electricity to the LED 131 and the protection device 133. Theelectrodes 121, 123, 125, 127, and 129 may selectively include a metallayer formed of a metal such as platinum (Pt), titanium (Ti), copper(Cu), nickel (Ni), gold (Au), tantalum (Ta), or aluminum (Al). At leastone of the electrodes 121, 123, 125, 127, and 129 may have asingle-layer or multi-layer structure. The uppermost layer of themulti-layer structure may include gold (Au) having a bonding propertyand the lowermost layer of the multi-layer structure may include a metalhaving an adhesive property. An intermediate layer of the multi-layerstructure may include a metal such as platinum (Pt), nickel (Ni), orcopper (Cu). However, the electrodes 121, 123, 125, 127, and 129 are notlimited to the above-mentioned structure.

The cavity 111 accommodates: the first electrode 121 on which the LED131 is disposed; and the second and third electrodes 123 and 125 spacedapart from the first electrode 121. The first electrode 121 is disposedin a center region of the cavity 111, and the second and thirdelectrodes 123 and 125 are disposed at both sides of the first electrode121. The second and third electrodes 123 and 125 may be disposed atsymmetric positions with respect to the center of the LED 131, and thetopsides of the second and third electrodes 123 and 125 may be opened.

The second electrode 123 is disposed on the bottom surface of the cavity111 at a position close to a first corner region of the cavity 111, andthe third electrode 125 is disposed on the bottom surface of the cavity111 at a position close to a second corner region of the cavity 111. Thefirst and second corner regions are diagonally arranged.

The fourth electrode 127 is disposed in the first sub cavity 112, andthe fifth electrode 129 is disposed in the second sub cavity 113. Thesecond and third electrodes 123 and 125 may be negative electrodes, andthe first, fourth, and fifth electrodes 121, 127, and 129 may bepositive electrodes. The polarities of the electrodes 121, 123, 125,127, and 129 are not limited thereto. The polarities of the electrodes121, 123, 125, 127, and 129 may be changed according to electrodepatterns or connection methods.

If a pad or a conductive substrate is not disposed under the LED 131,the first electrode 121 may be used as a nonpolar metal layer orheat-dissipating plate. Each of the electrodes 121, 123, 125, 127, and129 may be a metal layer. However, the electrodes 121, 123, 125, 127,and 129 are not limited thereto.

A portion 121A of the first electrode 121 may extend to an inside regionof the body 110 and may be electrically connected to the lower surfaceof the body 110 through the connection member 117.

As shown in FIGS. 3 to 6, a plurality of pads 141, 143, and 145 aredisposed on the lower surface of the body 110. The pads 141, 143, and145 include at least three pads. For example, the pads 141, 143, and 145include first, second, and third pads 141, 143, and 145. The first pad141 is disposed at a side of the lower surface of the body 110, thesecond pad 143 is disposed at a center region of the lower surface ofthe body 110, and the third pad 145 is disposed at the other side of thelower surface of the body 110. The second pad 143 is disposed betweenthe first pad 141 and the third pad 145 and has a width D1 greater thana width D2 of the first pad 141 or the third pad 145 (D1>D2). The lengthof each of the pads 141, 143, and 145 may be equal to or greater than70% of the length of the lower surface of the body 110. However, thelengths of the pads 141, 143, and 145 are not limited thereto.

At least two of the pads 141, 143, and 145 have a polarity. For example,the first and second pads 141 and 143 may be connected to a positivepower terminal, and the third pad 145 may be connected to a negativepower terminal. Since two pads 141 and 143 are connected to the positivepower terminal, a current path can be dispersed. Owing to this, heat canbe dispersed, and electrical reliability can be ensured.

As shown in FIGS. 4 to 6, the connection members 117 are disposed in thebody 110. The electrodes 121, 123, 125, 127, and 129 are selectivelyconnected to the pads 141, 143, and 145 through the connection members117. For example, the first, fourth, and fifth electrodes 121, 127, and129 may be connected to the first and second pads 141 and 143 through atleast one connection member 117, and the second and third electrodes 123and 125 may be connected to the third pad 145 through at least one otherconnection member 117. However, the current embodiment is not limitedthereto.

As shown in FIGS. 4 to 6, a heat dissipation member 151 is disposed inthe body 110. The main body 151 may be disposed under the LED 131. Thatis, the heat dissipation member 151 may be disposed under the firstelectrode 121. The thickness of the heat dissipation member 151 may bethinner than a thickness defined from the bottom surface of the cavity111 to the lower surface of the body 110. For example, the heatdissipation member 151 may have a thickness of 150 μm or greater.

The heat dissipation member 151 may be formed of a metal or a metalalloy. The metal alloy includes a metal having a high thermalconductivity such as copper (Cu). For example, the heat dissipationmember 151 may include CuW.

A lower portion of the heat dissipation member 151 may be wider than anupper portion of the heat dissipation member 151. The heat dissipationmember 151 may have a circular or polygonal shape when viewed from thetopside. The top surface area of the heat dissipation member 151 may begreater than at least the lower surface area of the LED 131. However,the heat dissipation member 151 is not limited thereto.

The first insulation layer L1 is disposed below the heat dissipationmember 151 and is used as a buffer layer. That is, the first insulationlayer L1 is disposed between the heat dissipation member 151 and thepads 141, 143, and 145 as a buffer layer for a rough surface of the heatdissipation member 151 so that the surface of the body 110 makingcontact with the second pad 143 can be flat for enhancing a solderbonding force. A roughness 152 formed on a lower surface of the heatdissipation member 151 may be 10 μm or less in root mean square (RMS).For example, the roughness 152 of the heat dissipation member 151 may be5 μm or less. The top surface of the first insulation layer L1 is roughdue to the roughness 152 of the heat dissipation member 151. Thus, thetop surface of the first insulation layer L1 may be rougher than thelower surface of the first insulation layer L1.

The first electrode 121 is disposed on the top surface of the heatdissipation member 151, and a bonding layer is disposed between thefirst electrode 121 and the LED 131. The bonding layer may have apredetermined thickness for relieving a roughness of the heatdissipation member 151. For example, the bonding layer may have athickness of about 5 μm. The bonding layer may include a conductivebonding material such as AuSn.

The LED 131 may be disposed in the cavity 111. The cavity 111 may be anultraviolet LED capable of emitting light having a wavelength of 245 nmto 405 nm. That is, an LED capable of emitting short-wavelengthultraviolet light having a wavelength of about 280 nm or an LED capableof emitting long-wavelength ultraviolet light having a wavelength of 365nm or 385 nm may be used as the LED 131.

As shown in FIG. 2, the LED 131 may be bonded to the first electrode 121using a conductive adhesive and connected to the second electrode 123through a first connection member 135. The LED 131 may be electricallyconnected to the first electrode 121 and the second electrode 123. TheLED 131 may be mounted using a wire bonding method, a die bondingmethod, or a flip bonding method according to the type of a chip and thepositions of electrodes of the chip. The protection device 133 may bebonded to the fourth electrode 127 and may be connected to the thirdelectrode 125 through a second connection member 137 for electricconnection with the third and fourth electrodes 125 and 127. The firstand second connection members 135 and 137 include wires.

The LED 131 may selectively include a semiconductor light emittingdevice fabricated using a semiconductor material such as a group IIIcompound semiconductor and a group V compound semiconductor. Forexample, the LED 131 may selectively include a semiconductor lightemitting device fabricated using AlInGaN, InGaN, GaN, GaAs, InGaP,AlInGaP, InP, or InGaAs.

A molding member may be disposed in at least one of the cavity 111 andthe sub cavities 112 and 113. The molding member may include atransparent resin material such as silicone or epoxy.

FIG. 7 illustrates an example in which a glass film 161 is disposed onthe light emitting device package 100.

Referring to FIG. 7, the glass film 161 is disposed on the body 110 tocover the cavity 111. The glass film 161 may include a glass-containingmaterial, and the top surface of the glass film 161 may be flat.

The glass film 161 may be formed of a transparent material such as LiF,MgF₂, CaF₂, BaF₂, Al₂O₃, SiO₂, or optical glass (N-BK7). If the glassfilm 161 is formed of SiO₂ by using crystal quartz or ultraviolet fusedsilica. The glass film 161 may be a low iron glass film.

The glass film 161 is disposed on the stepped structure 115 formedbetween the upper sixth and seventh insulation layers L6 and L7 and thelower fifth insulation layer L5. The glass film 161 may have a circularor polygonal shape. The glass film 161 may be connected to the body 110using fastening members and/or an adhesive. An additional structure maybe formed on the stepped structure 115 for supporting and fixing theglass film 161. However, the scope and spirit of the present disclosureare not limited thereto.

The thickness of the glass film 161 may be smaller than the thickness ofthe upper sixth and seventh insulation layers L6 and L7. However, theglass film 161 is not limited thereto. The thickness of the glass film161 may be equal to or less than ½ of the width difference between thesixth insulation layer L6 and the fifth insulation layer L5.

An adhesive (not shown) may be applied between the glass film 161 andthe top surface of the stepped structure 115. The adhesive may be asilver (Ag) paste, an ultraviolet adhesive, lead (Pb)-freelow-temperature glass adhesive, an acrylic adhesive, or a ceramicadhesive.

A molding member may be disposed in at least one of the cavity 111 andthe sub cavities 112 and 113. An inert gas may be filled in the cavity111 instead of filling the cavity 111 with a molding member. The LED 131can be protected from environments such as moisture and oxygen byfilling the cavity 111 with an inert gas such as nitrogen. In this case,a molding member may be filled in the sub cavities 112 and 113. However,the scope and spirit of the present disclosure are not limited thereto.

The heat dissipation member 151 is disposed in the body 110 to improveheat dissipation efficiency, and thus the same package structure can beused regardless of the wavelength of light emitted from the LED 131.That is, the same package structure can be used for various LEDs.

FIG. 8 illustrates a modified version of the light emitting devicepackage illustrated in FIG. 4.

Referring to FIG. 8, in the body 110, a sidewall 116A of the cavity 111is sloped from the bottom surface of the cavity 111. That is, the widthof an upper portion of the cavity 111 is greater than the width of alower portion of the cavity 111. For example, the width of the cavity111 may increase as it goes upward. Since the sidewall 116A of thecavity 111 is sloped between the glass film 161 and the bottom surfaceof the cavity 111, light extraction efficiency may be increased.

FIG. 9 illustrates a modified version of the light emitting devicepackage illustrated in FIG. 4.

Referring to FIG. 9, a molding member 170 is disposed in the cavity 111of the light emitting device package. The cavity 111 and the subcavities 112 and 113 may be filled with the molding member 170.Alternatively, the sub cavities 112 and 113 may be filled with themolding member 170, and the cavity 111 may be left empty. The moldingmember 170 may include a transparent resin material such as silicone orepoxy.

A glass film may be disposed on the cavity 111 as illustrated in FIG. 7.However, the current modified version is not limited thereto. Inaddition, a molding member filled in the sub cavities 112 and 113 may bedifferent from a molding member filled in the cavity 111.

A heat dissipation member 151A may be spaced apart from the bottomsurface of the cavity 111. The third insulation layer L3 may be disposedbetween the first electrode 121 and the top surface of the heatdissipation member 151A. The third insulation layer L3 may function asan upper buffer layer for a top surface roughness of the heatdissipation member 151A.

FIGS. 10 and 11 illustrate a second embodiment. FIG. 10 is a sectionalview taken along line A-A of FIG. 2, and FIG. 11 is a sectional viewtaken along line B-B of FIG. 2. In the following description of thesecond embodiment, descriptions of the same parts as those of the firstembodiment will not be repeated.

Referring to FIGS. 10 to 11, a light emitting device package includes: abody 110 having a cavity 111; a plurality of sub cavities 112 and 113(first and second sub cavities) disposed in the cavity 111; first tothird electrodes 121, 123, and 125 disposed in the cavity 111 of thebody 110; an LED 131 disposed on the first electrode 121; and aprotection device 133 disposed in one of the sub cavities 112 and 113.

The body 110 may have a stacked structure constituted by a plurality ofinsulation layers L1 to L7 (first to seventh insulation layers L1 toL7). The insulation layers L1 to L7 include a ceramic material. Theceramic material includes a low temperature co-fired ceramic material ora high temperature co-fired ceramic material. For example, the body 110may be formed of Si_(x)O_(y), Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃,or AlN. In another example, the body 110 may be formed of AlN or a metalnitride having a thermal conductivity of 140 W/mK or greater. The body110 may have a stacked structure constituted by a plurality of ceramiclayers.

A heat dissipation member 150 is disposed in the body 110. The heatdissipation member 150 is disposed between the LED 131 and the lowersurface of the body 110. The heat dissipation member 150 may makecontact with a lower side of the LED 131. That is, the heat dissipationmember 150 may make contact with a lower side of the first electrode121. The heat dissipation member 150 may have a thickness T1 smallerthan a thickness (T1+T2) defined from the bottom surface of the cavity111 to the lower surface of the body 110. The heat dissipation member150 may have a thickness of 150 μm or greater. The heat dissipationmember 150 may be formed of a metal or a metal alloy. The metal alloyincludes a metal having a high thermal conductivity such as copper (Cu).For example, the heat dissipation member 150 may include CuW. The heatdissipation member 150 may be thicker than the first insulation layerL1. For example, the thickness of the heat dissipation member 150 may bethree to eight times the thickness of the first insulation layer L1.

In a first section, a width D3 of a lower surface of the heatdissipation member 150 may be greater than that of a top surface of theheat dissipation member 150. The heat dissipation member 150 may have acircular or polygonal shape when viewed from the top. A width D6 of alower surface of the heat dissipation member 150 measured in a secondsection may be greater than a width D3 of the lower surface of the heatdissipation member 150 measured in the first section. However, thewidths D6 and D3 of the heat dissipation member 150 may be changedaccording to the positions of the sub cavities 112 and 113.

The top surface area of the heat dissipation member 150 may be greaterthan at least the lower surface area of the LED 131. However, the heatdissipation member 150 is not limited thereto.

The heat dissipation member 150 may include a first heat dissipationmember 51 and a second heat dissipation member 53. The first heatdissipation member 51 may be disposed under the first electrode 121 andmay be electrically connected to the LED 131. The second heatdissipation member 53 is disposed under the first heat dissipationmember 51 and has a width wider than that of the first heat dissipationmember 51. Heat generated from the LED 131 is conducted to the body 110or the second heat dissipation member 53 through the first heatdissipation member 51. Heat conducted from the first heat dissipationmember 51 to the second heat dissipation member 53 is conducted to thebody 110 or a second pad 143 through the first insulation layer L1. Forexample, the lower surface area of the second heat dissipation member 53may be smaller than the top surface area of the second pad 143 butgreater than the top surface area of the first heat dissipation member51.

The heat dissipation member 150 may be spaced apart from the first subcavity 112 by a distance D4 of 0.3 mm or greater. If the distance D4 isless than 0.3 mm, the body 110 formed of a ceramic material may becracked or broken. Thus, the distance D4 may be 0.3 mm or greater. Inaddition, owing to the distance D4, optical interference of lightemitted from the LED 131 can be reduced.

A protrusion 51A protrudes from a top surface edge of the first heatdissipation member 51 of the heat dissipation member 150. The protrusion51A protrudes from the first heat dissipation member 51 toward a lateralside of the cavity 111 or the body 110. The contour of the protrusion51A may be within the lower surface of the first electrode 121 butoutside the lower surface of the LED 131 for improving heat dissipationefficiency. The protrusion 51A of the first heat dissipation member 51may be spaced apart from the first sub cavity 112 or the second subcavity 113 by a distance D4 of 0.3 mm or greater. Owing to the distanceD4, breakage of the bottom side of the cavity 111 may be prevented atregions around the sub cavities 112 and 113.

The lateral side of the first heat dissipation member 51 has a groove orrecess structure concave from the protrusion 51A and the second heatdissipation member 53. Owing to the recess structure, the first heatdissipation member 51 can be coupled more firmly.

The first insulation layer L1 is disposed under the heat dissipationmember 150 and is used as a buffer layer. That is, the first insulationlayer L1 is disposed between the heat dissipation member 150 and firstto third pads 141, 143, and 145 as a buffer layer for the roughness ofthe heat dissipation member 150 so that the surface of the body 110making contact with the second pad 143 can be flat for enhancing asolder bonding force. The first insulation layer L1 may have a thicknessT2 of 50 μm or less. For example, the first insulation layer L1 may havea thickness T2 in the range from 20 μm to 50 μm. If the thickness T2 ofthe first insulation layer L1 is in the above-mentioned range, thesurface roughness of the heat dissipation member 150 may be relieved bythe first insulation layer L1.

A molding member may be disposed in at least one of the cavity 111 andthe sub cavities 112 and 113. The molding member may include atransparent resin material such as silicone or epoxy.

FIG. 12 illustrates a modified version of the light emitting devicepackage illustrated in FIG. 10.

Referring to FIG. 12, a glass film 161 is disposed on the body 110 tocover the cavity 111. The glass film 161 may be a glass-based filmhaving a predetermined strength, and the top surface of the glass film161 may be flat.

The glass film 161 may be formed of a transparent material such as LiF,MgF₂, CaF₂, BaF₂, Al₂O₃, SiO₂, or optical glass (N-BK7). If the glassfilm 161 is formed of SiO₂ by using crystal quartz or ultraviolet fusedsilica. The glass film 161 may be a low iron glass film.

A stepped structure 115 is formed by a width different D7 between theupper sixth and seventh insulation layers L6 and L7 and the lower fifthinsulation layer L5, and the stepped structure 115 has a top surfacelower than a top surface S1 of the body 110. The glass film 161 isplaced on the stepped structure 115. The glass film 161 may have acircular or polygonal shape. The glass film 161 may be connected to thebody 110 using fastening members and/or an adhesive. An additionalstructure may be formed on the stepped structure 115 for supporting andfixing the glass film 161. However, the scope and spirit of the presentdisclosure is not limited thereto.

The glass film 161 may have a thickness T3 smaller than a thickness T4of the upper sixth and seventh insulation layers L6 and L7. However, theglass film 161 is not limited thereto. The thickness T3 of the glassfilm 161 may be equal to or less than ½ of the width difference betweenthe sixth insulation layer L6 and the fifth insulation layer L5.

An adhesive (not shown) may be applied between the glass film 161 andthe top surface of the stepped structure 115. For example, the adhesivemay be a silver (Ag) paste, an ultraviolet adhesive, lead (Pb)-freelow-temperature glass adhesive, an acrylic adhesive, or a ceramicadhesive.

A molding member may be disposed in at least one of the cavity 111 andthe sub cavities 112 and 113. Alternatively, an inert gas may be filledin the cavity 111 instead of filling the cavity 111 with a moldingmember. The LED 131 can be protected from environments such as moistureand oxygen by filling the cavity 111 with an inert gas such as nitrogen.In this case, a molding member may be filled in the sub cavities 112 and113. However, the scope and spirit of the present disclosure are notlimited thereto.

The heat dissipation member 150 is disposed in the body 110 to improveheat dissipation efficiency, and thus the same package structure can beused regardless of the wavelength of light emitted from the LED 131.That is, the same package structure can be used for various LEDs.

A plurality of conductive vias 157 are formed in the first insulatinglayer L1 for electric connection between the heat dissipation member 150and the second pad 143. In addition, the conductive vias 157 mayfunction as heat dissipation passages for improving heat dissipationefficiency.

FIG. 13 is a sectional view illustrating a modified version of the lightemitting device package illustrated in FIG. 10.

Referring to FIG. 13, in the body 110, a sidewall 116A of the cavity 111is sloped. The width of an upper portion of the cavity 111 is wider thanthe width of a lower portion of the cavity 111. For example, the widthof the cavity 111 may increase as it goes upward. Since the sidewall116A of the cavity 111 is sloped, light extraction efficiency may beimproved.

A molding member 170 is disposed in the cavity 111. The cavity 111 andthe sub cavities 112 and 113 may be filled with the molding member 170.Alternatively, the sub cavities 112 and 113 may be filled with themolding member 170, and the cavity 111 may be left empty. The moldingmember 170 may include a transparent resin material such as silicone orepoxy. In addition, a molding member filled in the sub cavities 112 and113 may be different from a molding member filled in the cavity 111.

A glass film 161 may be disposed on the cavity 111. However, the currentmodified version is not limited thereto.

FIG. 14 is a view illustrating a light emitting device package accordingto a third embodiment. In the following description of the thirdembodiment, descriptions of the same parts as those of the firstembodiment will not be repeated.

Referring to FIG. 14, the light emitting device package includes: a body110A having a cavity 111 with an opened topside; a plurality ofelectrodes 121, 123, and 125 (first to third electrodes 121, 123, and125) disposed in the cavity 111; and an LED 131 disposed on the firstelectrode 121.

The body 110A may have a stacked structure constituted by a plurality ofinsulation layers L2 to L7 (second to seventh insulation layers L2 toL7). The insulation layers L2 to L7 are stacked in the thicknessdirection of the LED 131. The insulation layers L2 to L7 include aceramic material. The ceramic material includes a low temperatureco-fired ceramic material or a high temperature co-fired ceramicmaterial. For example, the body 110A may be formed of SiO₂, Si_(x)O_(y),Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, or AlN.

A buffer layer 101 is disposed on the lower surface of the body 110A.The buffer layer 101 may be formed of a ceramic material such as SiO₂,Si_(x)O_(y), Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, BN, Si₃N₄,SiC(SiC—BeO), BeO, CeO, or AlN. The buffer layer 101 may include a heatconductive material. For example, the buffer layer 101 may include oneof carbon (C) materials such as carbon nanotubes (CNTs) that isdifferent from the material used to form the body 110A.

The buffer layer 101 includes an insulation material such aspolyacrylate resin, epoxy resin, phenolic resin, polyamides resin,polyimides rein, unsaturated polyesters resin, polyphenylene ether resin(PPE), polyphenilene oxide resin (PPO), polyphenylenesulfides resin,cyanate ester resin, benzocyclobutene (BCB), Polyamido-amine Dendrimers(PAMAM), polypropylene-imine, Dendrimers (PPI), and PAMAM-OS(organosilicon) (PAMAM is inside and organosilicon is outside). Thebuffer layer 101 may be formed of a resin including one or a combinationof the listed materials.

At least one of compounds such as oxides, nitrides, fluorides, andsulfides having at least one of Al, Cr, Si, Ti, Zn, and Zr may be addedto the buffer layer 101. The compound added to the buffer layer 101 maybe a heat diffusing agent available in the form of powders, particles,fillers, or additives. In the following description, the compounded willbe referred to a heat diffusing agent. The heat diffusing agent may bean insulation material or a conductive material and have a particle sizeof 1 Å to 100,000 Å. For high heat diffusing efficiency, the heatdiffusing agent may have a particle size in the range from 1,000 Å to50,000 Å. The heat diffusing agent may have a spherical or randomparticle shape. However, the particle shape of the heat diffusing agentis not limited thereto.

The heat diffusing agent includes a ceramic material. The ceramicmaterial includes at least one of low temperature co-fired ceramic(LTCC), high temperature co-fired ceramic (HTCC), alumina, quartz,calcium zirconate, forsterite, SiC, graphite, fused silica, mullite,cordierite, zirconia, beryllia, and aluminum nitride.

The buffer layer 101 may be disposed between the body 110A and the pads141, 143, and 145. The buffer layer 101 makes contact with the lowersurface of a heat dissipation member 151 for relieving the surfaceroughness of the heat dissipation member 151 and dissipate heatconducted from the heat dissipation member 151.

The buffer layer 101 may have a top surface area equal to the lowersurface area of the body 110A. However, the buffer layer 101 is notlimited thereto.

FIG. 15 is a view illustrating a light emitting device package accordingto a fourth embodiment. In the following description of the fourthembodiment, descriptions of the same parts as those of the firstembodiment will not be repeated.

Referring to FIG. 15, the light emitting device package includes: a heatdissipation member 151 disposed between the lower surface of a body 110and a LED 131; and a buffer layer 103 disposed between the heatdissipation member 151 and a second pad 143.

The buffer layer 103 may be formed of a metal material different fromthat used to form the second pad 143. For example, the buffer layer 103may include at least one of Ti, Cr, Ta, Cr/Au, Cr/Cu, Ti/Au, Ta/Cu, andTa/Ti/Cu. The buffer layer 103 may be formed of a metal material andhave a roughness smaller than that of the heat dissipation member 151.In another example, the buffer layer 103 may include a metal oxide.However, the buffer layer 103 is not limited thereto. The width of thebuffer layer 103 may be wider than that of the lower surface of the heatdissipation member 151 but smaller than that of the top surface of thesecond pad 143.

The buffer layer 103 functions as a buffer layer for the surfaceroughness of the heat dissipation member 151 and as an electricallyconductive layer. The buffer layer 103 is disposed in a recess 102formed in the lower surface of the body 110. The buffer layer 103 makescontact with the lower surface of the heat dissipation member 151 andthe top surface of the second pad 143. Therefore, heat conducted fromthe heat dissipation member 151 can be transferred to the second pad 143through the buffer layer 103, and electricity can be input through thesecond pad 143, the buffer layer 103, and the heat dissipation member151.

FIG. 16 is a view illustrating a light emitting device package accordingto a fifth embodiment. In the following description of the fifthembodiment, descriptions of the same parts as those of the firstembodiment will not be repeated.

Referring to FIG. 16, the light emitting device package includes: a heatdissipation member 151 disposed between the lower surface of a body 110and a LED 131; and a buffer layer 104 disposed between the heatdissipation member 151 and a second pad 143.

The buffer layer 104 is disposed between the second pad 143 and the heatdissipation member 151 while making contact with the second pad 143 andthe heat dissipation member 151. The buffer layer 104 may be formed of amaterial that is electrically insulative but thermally conductive. Forexample, the buffer layer 104 may be formed of a ceramic material.

The buffer layer 104 may be formed of a ceramic material such as SiO₂,Si_(x)O_(y), Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, BN, Si₃N₄,SiC(SiC—BeO), BeO, CeO, or AlN. The buffer layer 104 may include one ofcarbon (C) materials such as CNTs as a heat conductive material. Atleast one of compounds such as oxides, nitrides, fluorides, and sulfideshaving at least one of Al, Cr, Si, Ti, Zn, and Zr may be added to thebuffer layer 104.

Therefore, the buffer layer 104 can be electrically insulative butthermally conductive. The buffer layer 104 is disposed in a recess 102formed in the lower surface of the body 110. The buffer layer 103 makescontact with the lower surface of the heat dissipation member 151 andthe top surface of the second pad 143. Therefore, heat conducted fromthe heat dissipation member 151 can be transferred to the second pad 143through the buffer layer 104.

FIG. 17 is a plan view illustrating a light emitting device packageaccording to a sixth embodiment.

Referring to FIG. 17, first and second electrodes 122 and 123 of thelight emitting device package may be positive electrodes, and a thirdelectrode 125 of the light emitting device package may be a negativeelectrode. A LED 131 may be connected to the second electrode 123 andthe third electrode 125 through at least two connection members 135 and136. The connection members 135 and 136 include wires.

The LED 131 may be only in physical contact with the first electrode 122without electric connection with the first electrode 122.

FIG. 18 is a plan view illustrating a light emitting device packageaccording to a seventh embodiment.

Referring to FIG. 18, at least four sub cavities 112, 113, 113A, and113B are disposed in a cavity 111 of the light emitting device package,and a protection device 133 is disposed at least one of the four subcavities 112, 113, 113A, and 113B. If the light emitting device packageincludes a plurality of LEDs 131, protection devices may be disposed inat least two of the sub cavities 112, 113, 113A, and 113B for protectingthe LEDs 131. However, the current embodiment is not limited thereto.

The sub cavities 112, 113, 113A, and 113B are symmetrically arrangedwith respect to the center of an LED 131. Therefore, imbalance heatdissipation can be prevented in the cavity 111, and thus distortion of abody 110 can be prevented. As a result, separation of the LED 131 orwires from bonding portions can be prevented.

FIG. 19 illustrates an ultraviolet LED 131 according to an embodiment.

Referring to FIG. 19, the LED 131 has a vertical electrode structure.The LED 131 includes a first electrode layer 21, a first conductive typesemiconductor layer 23, an active layer 25, a second conductive typesemiconductor layer 27, and a second electrode layer 29. Alternatively,the LED 131 may have a horizontal electrode structure. That is, thescope and spirit of the present disclosure is not limited to the type ofthe LED 131.

The first electrode layer 21 may include a conductive support substrateor may function as a pad. The first electrode layer 21 may be used as asubstrate on which a compound semiconductor can grow.

A group III-V nitride semiconductor layer grows on the first electrodelayer 21. Examples of semiconductor growth apparatus includes an E-beamevaporator apparatus, a physical vapor deposition (PVD) apparatus, achemical vapor deposition (CVD) apparatus, a plasma laser deposition(PLD) apparatus, a dual-type thermal evaporator, a sputtering apparatus,and a metal organic chemical vapor deposition (MOCVD) apparatus.However, the growth apparatus is not limited thereto.

The first conductive type semiconductor layer 23 is disposed on thefirst electrode layer 21. The first conductive type semiconductor layer23 may be formed of at least one of group II-VI or III-V compoundsemiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.The first conductive type semiconductor layer 23 may be doped with afirst conductive type dopant. The first conductive type dopant may be anN-type dopant. At least one of Si, Ge, Sn, Se, and Te may be added tothe first conductive type semiconductor layer 23 as the first conductivetype dopant.

A current spreading structure is included in a predetermined region ofthe first conductive type semiconductor layer 23. The current spreadingstructure includes semiconductor layers in which a current spreads morerapidly in a horizontal direction than in a vertical direction. Thecurrent spreading structure may include a plurality of semiconductorlayers having different dopant concentrations or conductivities.

The active layer 25 is disposed on the first conductive typesemiconductor layer 23, and the active layer 25 may has a single quantumwell structure or a multi quantum well (MQW) structure. The active layer25 may include a series of barrier layer/well layer. The barrierlayer/well layer may be at least one of GaN/InGaN, AlGaN/InGaN,InGaN/InGaN, GaN/AlGaN, AlGaN/GaN, and InAlGaN/InAlGaN.

A first conductive type cladding layer (not shown) may be disposedbetween the first conductive type semiconductor layer 23 and the activelayer 25, and a second conductive type cladding layer (not shown) may bedisposed between the second conductive type semiconductor layer 27 andthe active layer 25. Each of the conductive type cladding layers may beformed of a compound semiconductor material having an energy bandgreater than the energy band gap of a well layer of the active layer 25.

The second conductive type semiconductor layer 27 is disposed on theactive layer 25. The second conductive type semiconductor layer 27 maybe a P-type semiconductor layer doped with a second conductive typedopant. For example, the P-type semiconductor layer may be formed of oneof compound semiconductor materials such as GaN, InN, AlN, InGaN, AlGaN,InAlGaN, and AlInN. The second conductive type dopant may be a P-typedopant such as Mg, Zn, Ca, Sr, and Ba.

A current spreading structure is included in a predetermined region ofthe second conductive type semiconductor layer 27. The current spreadingstructure includes semiconductor layers in which a current spreads morerapidly in a horizontal direction than in a vertical direction.

Also, the first conductive type semiconductor layer 23 may include aP-type semiconductor layer, and the second conductive type semiconductorlayer 27 may be an N-type semiconductor layer. A light emittingstructure may be formed of one of an n-p junction structure, a p-njunction structure, an n-p-n junction structure, and a p-n-p junctionstructure. In the following description, the case where the secondconductive type semiconductor layer 27 is the uppermost semiconductorlayer will be explained as an example.

The second electrode layer 29 is disposed on the second conductive typesemiconductor layer 27. The second electrode 29 may include a p-side padand/or an electrode layer. The electrode layer may be a transparentlayer formed of an oxide or a nitride, such as ITO (indium tin oxide),ITON (indium tin oxide nitride), IZO (indium zinc oxide), IZON (indiumzinc oxide nitride), IZTO (indium zinc tin oxide), IAZO (indium aluminumzinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tinoxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO(gallium zinc oxide), IrO_(x), RuO_(x), and NiO.

The second electrode layer 29 may function as a current spreading layerfor spreading a current. In addition, the second electrode layer 29 maybe a reflective electrode layer formed of Ag, Ni, Al, Rh, Pd, Ir, Ru,Mg, Zn, Pt, Au, Hf, and a combination thereof. The second electrodelayer 29 may include a metal layer having a single-layer or multi-layerstructure.

FIG. 20 is a perspective view illustrating an ultraviolet (UV) lampincluding light emitting device packages according to an embodiment.

Referring to FIG. 20, a lighting system 1500 may include a case 1510, alight emitting module 1530 disposed in the case 1510, and a connectionterminal 1520 disposed on the case 1510 to receive power from anexternal power source.

The case 1510 may be formed of a material having good heat dissipationcharacteristics, such as a metal material or a resin material.

The light emitting module 1530 may include: a module board 1532; andlight emitting device packages 100 such as that described in the aboveembodiments. The light emitting device packages 100 are disposed on themodule board 1532. The light emitting device packages 100 may bearranged in a matrix format or at predetermined intervals.

The module board 1532 may be a board in which circuit patterns areprinted on an insulator. Examples of the module board 1532 may include ageneral printed circuit board (PCB), a metal core PCB, a flexible PCB, aceramic PCB, and an FR-4 board.

In addition, the module board 1532 may be formed of a material capableof reflecting light efficiently. Alternatively, the board module board1532 may be coated with a color layer such as a white or silver layerfor efficiently reflecting light.

At least one light emitting device package 100 as is described in theprevious embodiments may be disposed on the module board 1532. Each ofthe light emitting device package 100 may include at least oneultraviolet LED. The ultraviolet LED may emit light having a wavelengthof 245 nm to 405 nm. That is, any LED capable of emittingshort-wavelength ultraviolet rays having a wavelength of about 280 nm orlong-wavelength ultraviolet rays having a wavelength of 365 nm or 385 nmmay be used.

The connection terminal 1520 may be electrically connected to the lightemitting module 1530 to supply power. The connection terminal 1520 maybe a screw terminal that can be coupled to an external power sourcesocket. However, the current embodiment is not limited thereto. Forexample, the connection terminal 1520 may be formed in a pin shape. Inthis case, the connection terminal 1120 may be inserted into an externalpower source or connected to the external power source by using a cable.

According to the embodiments, the protection device such as a Zenerdiode is disposed in the light emitting device package to protect theultraviolet LED. In the embodiments, although the protection device isdisposed in the cavity of the light emitting device package, lightextraction efficiency is not decreased, and the directional angle oflight is not distorted by the protective device. According to theembodiments, since the heat dissipation member is disposed in the lightemitting device package, heat dissipation efficiency can be improved. Inaddition, permeation of moisture is suppressed by making corners of thecavity round. According to the embodiments, any LED emitting lighthaving a wavelength of 245 nm to 405 nm can be used in the lightemitting device package. That is, different packages are not necessaryfor LEDs emitting light having different wavelengths.

According to the embodiments, although the body of the light emittingdevice package is formed of a ceramic material, the ceramic body canundergo uniform thermal expansion owing to the sub cavities disposed atsymmetric positions with respect to the LED. Therefore, the lightemitting device package formed of a ceramic material can be thermallystable. According to the embodiments, the ultraviolet lamp includingultraviolet light emitting device packages can have improvedreliability.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device package comprising: abody comprising a bottom portion, a sidewall disposed on the bottomportion, and a cavity formed by a surface of the sidewall and an uppersurface of the bottom portion; a plurality of electrodes disposed on theupper surface of the bottom portion; a light emitting device disposed inthe cavity; a heat dissipation member disposed in the bottom portion; aplurality of pads disposed on a lower surface of the bottom portion; anda connection member that extends through the bottom portion; wherein theplurality of electrodes includes a first electrode, a second electrode,and a third electrode between the first electrode and the secondelectrode, wherein the third electrode includes a first portion and anextending portion, wherein the light emitting device is disposed on thefirst portion, wherein the plurality of pads includes a first pad, asecond pad, and a third pad disposed between the first pad and thesecond pad, wherein the connection member passes through the body andelectrically contacts an end portion of the extending portion and thefirst pad, wherein the end portion of the extending portion and theconnection member are disposed at an outside area of the heatdissipation member, wherein the second pad electrically contacts atleast one of the first electrode or the second electrode, and whereinthe heat dissipation member is separated from the third pad and theconnection member.
 2. The light emitting device package of claim 1,wherein the first electrode includes a first bent portion, a firstlinear portion that extends from the first bent portion in a firstdirection, a second linear portion that extends from the first bentportion in a second direction different from the first direction,wherein the second electrode includes a second bent portion, a thirdlinear portion that extends from the second bent portion in the firstdirection, a fourth linear portion that extends from the second bentportion in the second direction.
 3. The light emitting device package ofclaim 2, wherein the second direction is perpendicular to the firstdirection.
 4. The light emitting device package of claim 3, wherein thesecond linear portion, the fourth linear portion, and the first portionof the third electrode overlap in the first direction.
 5. The lightemitting device package of claim 4, wherein the plurality of electrodesincludes a fourth electrode and a fifth electrode.
 6. The light emittingdevice package of claim 5, wherein the bottom portion includes aplurality of sub-cavities formed on the upper surface of the bottomportion, wherein the plurality of sub-cavities includes a first subcavity and a second sub-cavity.
 7. The light emitting device package ofclaim 6, wherein the extending portion is disposed between the firstsub-cavity and the second linear portion.
 8. The light emitting devicepackage of claim 7, wherein the fourth electrode is disposed in thefirst sub-cavity, and the fifth electrode is disposed in the secondsub-cavity.
 9. The light emitting device package of claim 8, wherein aprotective device is disposed in the second sub-cavity.
 10. The lightemitting device package of claim 9, wherein the sidewall of the bodyincludes a first sidewall and a second sidewall that each extend in thesecond direction, wherein the first sub-cavity is closer to the firstsidewall than the second sidewall, and wherein the second sub-cavity iscloser to the second sidewall than the first sidewall.
 11. A lightemitting device package comprising: a body comprising an upper surface,a lower surface, and a cavity recessed in a vertical direction from theupper surface towards the lower surface; a first electrode disposed on abottom surface of the cavity, a second electrode disposed on the bottomsurface of the cavity and separated from the first electrode in ahorizontal direction, and a third electrode disposed between the firstelectrode and the second electrode; a heat dissipation member disposedin the body; and a first pad disposed on the lower surface of the body,a second pad disposed on the lower surface of the body, and a third paddisposed on the lower surface of the body and separated from the firstpad in the horizontal direction, the second pad being disposed betweenthe first pad and the third pad; wherein the heat dissipation memberincludes a first heat dissipation portion, and a second heat dissipationportion, wherein first heat dissipation portion and the second heatdissipation portion have different widths in the horizontal direction,wherein the cavity includes a plurality of side walls that extend indifferent directions, wherein the first electrode and the secondelectrode are respectively disposed to extend along at least two sidewalls among the plurality of side walls, wherein the third electrodeincludes a pad portion on which a light emitting device is disposed andan extending portion that extends from the pad portion towards one ormore of the plurality of side walls, wherein an end portion of theextending portion is electrically connected to the first pad by aconnection member that passes through the body, wherein the end portionof the extending portion and the connection member are disposed at anoutside are of the heat dissipation member, wherein the heat dissipationmember, the light emitting device, and the second pad overlap in thevertical direction, and wherein the heat dissipation member and thesecond pad are spaced away from each other in the vertical direction.12. The light emitting device package of claim 11, wherein the cavitycomprises a stepped portion at an upper portion of the cavity, wherein atransparent member is disposed on the stepped portion.
 13. The lightemitting device package of claim 12, wherein the plurality of sidewallsincludes a first sidewall and a second sidewall that extend along afirst direction, and a third sidewall and a fourth sidewall that extendalong a second direction, wherein the first electrode includes a firstportion adjacent to the second sidewall and a second portion adjacent tothe fourth sidewall, and wherein the second electrode includes a thirdportion adjacent to the first sidewall and a fourth portion adjacent tothe third sidewall.
 14. The light emitting device package of claim 13,wherein a first sub-cavity and a second sub-cavity are formed on thebottom surface of the cavity.
 15. The light emitting device package ofclaim 14, wherein the extending portion is disposed between the firstsub-cavity and the second portion of the first electrode.
 16. The lightemitting device package of claim 15, wherein a fourth electrode isdisposed in the first sub-cavity, wherein a fifth electrode is disposedin the second sub-cavity, and wherein a protective device is disposed onthe fifth electrode.
 17. A light emitting device package comprising: abody comprising a first sidewall that extends in a first direction, asecond sidewall that extends in the first direction, a third sidewallthat extends in a second direction perpendicular to the first direction,a fourth sidewall that extends in the second direction, a bottomportion, and a cavity formed by an inner surface of the first sidewall,an inner surface of the second sidewall, an inner surface of the thirdsidewall, an inner surface sidewall of the fourth sidewall, and an uppersurface of the bottom portion; a first electrode disposed on the uppersurface of the bottom portion, a second electrode disposed on the uppersurface of the bottom portion, and a third electrode disposed on theupper surface of the bottom portion and separated from the secondelectrode, the first electrode being disposed between the secondelectrode and the third electrode; a light emitting device disposed onthe first electrode and configured to emit ultraviolet light; a heatdissipation member comprising a first heat dissipation portion in thebottom portion and a second heat dissipation portion disposed betweenthe first heat dissipation portion and a lower surface of the body,wherein a width of the second heat dissipation portion is different thana width of the first heat dissipation portion in the first direction orthe second direction; and a first pad disposed on the lower surface ofthe body, a second pad disposed on the lower surface of the body, and athird pad disposed on the lower surface of the body and separated fromthe first pad, the second pad being disposed between the first pad andthe third pad, wherein the second electrode comprises a first portiondisposed adjacent to the second sidewall and extending in the firstdirection, and a second portion disposed adjacent to the fourth sidewalland extending from the first portion in the second direction, whereinthe third electrode comprises a third portion disposed adjacent to thefirst sidewall and extending in the first direction, and a fourthportion disposed adjacent to the third sidewall and extending from thethird portion in the second direction, wherein the first electrodeincludes a pad portion disposed on a region in which the second portionof the second electrode and the fourth portion of the third electrodeoverlap in the first direction, and an extending portion that extendsfrom the pad portion, wherein the light emitting device is disposed onthe pad portion, wherein an end portion of the extending portion iselectrically connected to the first pad by a connection member whichpasses through the body, wherein the end portion of the extendingportion and the connection member are disposed at an outside area of theheat dissipation member, wherein the heat dissipation member, the lightemitting device, and the second pad overlap in a third direction thatextends from the upper surface of the bottom portion towards the lowersurface of the body, the third direction being perpendicular to thefirst direction and the second direction, and wherein the heatdissipation member and the second pad are spaced away from each other inthe third direction.
 18. The light emitting device package of claim 17,wherein a fourth electrode and a fifth electrode are disposed to beseparate from the first electrode, the second electrode, and the thirdelectrode, wherein each of areas of the fourth electrode and the fifthelectrode is smaller than each of areas of the first electrode, thesecond electrode, and the third electrode.
 19. The light emitting devicepackage of claim 18, wherein an electrical protection device iselectrically connected to at least one of the fourth electrode or thefifth electrode.
 20. The light emitting device package of claim 18,wherein the extending portion is disposed between the fourth electrodeand the second portion of the second electrode.